EM-411 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IRFB4110，IIRFB4110 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Sp

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Features  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10 V  100% Avalanche test  Pb-free lead plating; RoHS compliant VS4110AT-Y 100V/

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36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) CY7C

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www.DataSheet.co.kr Ordering number : ENA1250 Bi-CMOS LSI LV8411GR Overview For DSC, and Cell Phone Camera Modules 4-channel Single-chip Motor Dr

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www.vishay.com VEMD4110X01 Vishay Semiconductors Silicon PIN Photodiode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models Footprints Infographics D

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NEe Microcomputers, Inc. NEe J PD411 JJ PD411·1 f'PD411·2 , PD411·3 flo PD411·4 oESCR I PTION FEATUR ES FULLY DECODED RANDOM ACCESS MEMORY The

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www.DataSheet4U.com 0.4 INCH (10.1MM) TWO DIGIT STICK DISPLAY DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

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Features  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10V  Fast Switching and High efficiency  100% Avalanche Tested  Pb-free lead pla

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UZ4706 SERIES UZ4806 SERIES High-reliability discrete products and engineering services since 1977 5 WATT ZENER DIODES FEATURES  Available as “HR”

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CY7C1411AV18, CY7C1426AV18 www.DataSheet4U.com CY7C1413AV18, CY7C1415AV18 36-Mbit QDR™-II SRAM 4-Word Burst Architecture Features ■ Functional Descr

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AOC2411 30V P-Channel MOSFET General Description Product Summary The AOC2411 uses advanced trench technology to provide excellent RDS(ON), low gate

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ASAHI KASEI [AK4112A] AK4112A High Feature 96kHz 24bit DIR GENERAL DESCRIPTION The AK4112A is a digital audio receiver (DIR) compatible with 96kHz,

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ASAHI KASEI [AK4113] AK4113 192kHz 24bit DIR with 6:1 Selector GENERAL DESCRIPTION The AK4113 is a 24-bit stereo digital audio receiver that support

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SILICON HIGH RATIO PLASTIC THRU HOLE VARACTORS The TMV1400 Series of hyperabrupt varactors offer high capacitance ratios with linear tuning between 2

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BCR 10PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two (galvanic) internal isolated NP

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www.DataSheet4U.com 0.4 INCH (10.1MM) TWO DIGIT STICK DISPLAY DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

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