EM-778 Datasheet | Specifications & PDF Download

www.DataSheet4U.com Ordering number : ENN6992 2SC5778 NPN Triple Diffused Planar Silicon Transistor 2SC5778 Ultrahigh-Definition CRT Display Horizon

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Lighting | Imaging | Telecom Pyroelectric Infrared Detectors Dual Element Detector TO-5 housing Competitive cost version Designed for motion con

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD777/D Plastic Darlington Complementary Silicon Power Transistors . . . designed for

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type

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Silicon Switching Diodes BAW 78 A … BAW 78 D Switching applications q High breakdown voltage q Type BAW 78 A BAW 78 B BAW 78 C BAW 78 D Marking GA

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FDD6778A N-Channel PowerTrench® MOSFET January 2009 FDD6778A N-Channel PowerTrench® MOSFET 25 V, 14.0 mΩ Features General Description This N-Channel

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EIA7785-6 UPDATED 11/30/2005 7.70-8.50 GHz 6-Watt Internally Matched Power FET Excelics EIA7785-6 .827±.010 .669 .120 MIN FEATURES • • • • • • 7.70–

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MICROWAVE POWER GaN HEMT TGI7785-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 44.0dBm ･HIGH GAIN GL= 11.0dB at

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Manufacture Diodes, IGBTs, LED Driver, Small Signal & Analog, RF Po Page 1 of 1 2N3778 (#23707) PNP Transistor Division Ireland Mil-Spec (non

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2SA778(K), 2SA778A(K) Silicon PNP Epitaxial Application High voltage medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1

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WWW.Microsemi .COM SCOTTSDALE DIVISION 1N4775 thru 1N4784A 8.5 Volt Temperature Compensated Zener Reference Diodes DESCRIPTION The 1N4775 thru 1N47

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WWW.Microsemi .COM SCOTTSDALE DIVISION 1N4775 thru 1N4784A 8.5 Volt Temperature Compensated Zener Reference Diodes DESCRIPTION The 1N4775 thru 1N47

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD777/D Plastic Darlington Complementary Silicon Power Transistors . . . designed for

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www.DataSheet4U.com Ordering number : ENN6992 2SC5778 NPN Triple Diffused Planar Silicon Transistor 2SC5778 Ultrahigh-Definition CRT Display Horizon

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MICROWAVE POWER GaN HEMT TGI7785-60LHA FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 48.0dBm at Pin= 41dBm ŋHIGH GAIN GL= 11.5dB at P

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2SA778(K), 2SA778A(K) Silicon PNP Epitaxial Application High voltage medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1

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