.
Fairchild Semiconductor
FDD6778A - N-Channel MOSFET
FDD6778A N-Channel PowerTrench® MOSFET January 2009 FDD6778A N-Channel PowerTrench® MOSFET 25 V, 14.0 mΩ Features General Description This N-Channel.
PerkinElmer Optoelectronics
LHI778 - Dual Element Detector
Lighting | Imaging | Telecom Pyroelectric Infrared Detectors Dual Element Detector TO-5 housing Competitive cost version Designed for motion con.
Maxim Integrated
MAX77826 - Power Management IC
MAX77826 EVALUATION KIT AVAILABLE Power Management IC General Description The MAX77826 is a subpower management IC for the latest 3G/4G smartphones .
Excelics Semiconductor
EIC7785-10 - Internally Matched Power FET
www.DataSheet4U.com EIC7785-10 UPDATED 04/12/2006 7.70-8.50 GHz 10-Watt Internally Matched Power FET Excelics EIC7785-10 .827±.010 .669 .120 MIN FE.
Excelics Semiconductor
EIC7785-4 - Internally Matched Power FET
www.DataSheet4U.com EIC7785-4 UPDATED 08/21/2007 7.70-8.50GHz 4-Watt Internally-Matched Power FET FEATURES • • • • • • • 7.70–8.50GHz Bandwidth Inp.
Excelics Semiconductor
EIC7785-8 - Internally Matched Power FET
www.DataSheet4U.com EIC7785-8 UPDATED 08/21/2007 7.70-8.50GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • 7.70–8.50GHz Bandwidth Inp.
ON Semiconductor
LA7784 - Downconverter IC
Ordering number : ENN8386 LA7784 Monolithic Linear IC Downconverter IC for Digital CATV http://onsemi.com Overview The LA7784 is a downconverter IC.
Alpha & Omega Semiconductors
AON7788 - 30V N-Channel MOSFET
AON7788 30V N-Channel MOSFET SRFET TM General Description Product Summary SRFETTM AON7788 uses advanced trench technology with a monolithically int.
Inchange Semiconductor
KTB778 - Silicon PNP Power Transistors
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type .
Hitachi Semiconductor
2SA778 - Silicon PNP Transistor
2SA778(K), 2SA778A(K) Silicon PNP Epitaxial Application High voltage medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1.
Hitachi Semiconductor
2SA778A - Silicon PNP Transistor
2SA778(K), 2SA778A(K) Silicon PNP Epitaxial Application High voltage medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1.
Hitachi Semiconductor
2SA778AK - Silicon PNP Transistor
2SA778(K), 2SA778A(K) Silicon PNP Epitaxial Application High voltage medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1.
Panasonic Semiconductor
2SC2778 - Silicon NPN Transistor
Transistors 2SC2778 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm ■ Features • Optimum for RF amplification, oscillat.
Sanyo Semicon Device
2SC3778 - NPN Epitaxial Planar Silicon Transistor
Ordering number:EN1951B NPN Epitaxial Planar Silicon Transistor 2SC3778 UHF Low-Noise Amplifier, Wide-Band Amplifier Applications Applications · UHF.
Compensated Deuices Incorporated
CDLL4778 - TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 8.5 VOLT NOMINAL ZENER VOLTAGE + 5% • LOW CURRENT RANGE: 0.5 T.
Compensated Deuices Incorporated
CDLL4778A - TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 8.5 VOLT NOMINAL ZENER VOLTAGE + 5% • LOW CURRENT RANGE: 0.5 T.
