KTB778 Silicon PNP Power Transistors

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). Good Linearity of hFE. Complement to Type KTD998. Minimum Lot-to-Lot var.

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Datasheet Specifications

Part number: KTB778
Manufacturer: Inchange Semiconductor
File Size: 225.92 KB
Datasheet: KTB778-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistors

Applications

* High power amplifier applications
* Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V

KTB778 Distributors

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KTB778 Silicon PNP Power Transistors Inchange Semiconductor

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