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KTB778 - Silicon PNP Power Transistors

KTB778 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). Good Linearity of hFE. Complement to Type KTD998. Minimum Lot-to-Lot var.

KTB778 Applications

* High power amplifier applications
* Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V

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Datasheet Details

Part number
KTB778
Manufacturer
Inchange Semiconductor
File Size
225.92 KB
Datasheet
KTB778-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistors

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Silicon PNP Power Transistors Inchange Semiconductor
Inchange Semiconductor KTB778-like datasheet

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