KTB1368 Silicon PNP Power Transistors

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). Collector Power Dissipation- : PC= 25W@ TC= 25℃. Low Collector Saturation Vol.

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Datasheet Specifications

Part number: KTB1368
Manufacturer: Inchange Semiconductor
File Size: 212.73 KB
Datasheet: KTB1368-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistors

Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current-Continuous P

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KTB1368 Silicon PNP Power Transistors Inchange Semiconductor

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