KTB1369 - Silicon PNP Power Transistors
*High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) *Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -0.5A, IB= -50mA) *Complement to Type KTD2061 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *High V
