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KTB1369 Silicon PNP Power Transistors

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Description

isc Silicon PNP Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min). Low Collector Saturation Voltage- : VCE(sat)= -1.

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Datasheet Specifications

Part number
KTB1369
Manufacturer
Inchange Semiconductor
File Size
215.26 KB
Datasheet
KTB1369-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistors

Applications

* High Voltage application
* TV, monitor vertical output application
* Driver stage application
* Color TV class B sound output application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -180 V

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