KTB1369 Datasheet - Inchange Semiconductor

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KTB1369 Silicon PNP Power Transistors

isc Silicon PNP Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min). Low Collector Saturation Voltage- : VCE(sat)= -1.

KTB1369-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

KTB1369

Manufacturer:

Inchange Semiconductor

File Size:

215.26 KB

Description:

Silicon PNP Power Transistors

Applications

* High Voltage application
* TV, monitor vertical output application
* Driver stage application
* Color TV class B sound output application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -180 V

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KTB1369 Silicon PNP Power Transistors Inchange Semiconductor

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