KTB1367 Silicon PNP Power Transistors

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). Collector Power Dissipation- : PC= 30W@ TC= 25℃. Low Collector Saturation Vo.

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Datasheet Specifications

Part number: KTB1367
Manufacturer: Inchange Semiconductor
File Size: 214.96 KB
Datasheet: KTB1367-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistors

Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A IB Base Current-Continuous

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KTB1367 Silicon PNP Power Transistors Inchange Semiconductor

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