KTB1367 Datasheet, Transistors, Inchange Semiconductor

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KTB1367

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📄 Datasheet

Description:

Silicon pnp power transistors.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min)

Collector Power Dissipation- : PC= 30W@ TC= 25℃

KTB1367 Application

• Applications
• Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-

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KTB1367

Inchange Semiconductor

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