KTB2955 Silicon PNP Power Transistors

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification KTB2955 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). Complement to Type KTD3055 APPLICATIONS. High power amplifier applications.

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Datasheet Specifications

Part number: KTB2955
Manufacturer: Inchange Semiconductor
File Size: 145.18 KB
Datasheet: KTB2955-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistors

Applications

* High power amplifier applications
* Recommended for 30~35W audio frequency amplifier output stage application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V

KTB2955 Distributors

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KTB2955 Silicon PNP Power Transistors Inchange Semiconductor

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