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KTB2510

Silicon PNP Power Transistors

KTB2510 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min)
*Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max) @IC= -7A
*High DC Current Gain : hFE= 5000(Min) @ IC= -7A, VCE= -4V
*Complement to Type KTD1510 APPLICATIONS
*High power amplifier applications
*Recomme.

KTB2510 Datasheet (146.19 KB)

Preview of KTB2510 PDF

Datasheet Details

Part number:

KTB2510

Manufacturer:

Inchange Semiconductor

File Size:

146.19 KB

Description:

Silicon pnp power transistors.

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KTB2510 Silicon PNP Power Transistors Inchange Semiconductor

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