KTB2510 - Silicon PNP Power Transistors
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max) @IC= -7A *High DC Current Gain : hFE= 5000(Min) @ IC= -7A, VCE= -4V *Complement to Type KTD1510 APPLICATIONS *High power amplifier applications *Recomme
