KTB2510 Silicon PNP Power Transistors

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification KTB2510 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= -2. High.

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Datasheet Specifications

Part number: KTB2510
Manufacturer: Inchange Semiconductor
File Size: 146.19 KB
Datasheet: KTB2510-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistors

Applications

* High power amplifier applications
* Recommended for 60W audio amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Cont

KTB2510 Distributors

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KTB2510 Silicon PNP Power Transistors Inchange Semiconductor

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