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KTB2510 Datasheet - Inchange Semiconductor

KTB2510 Silicon PNP Power Transistors

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max) @IC= -7A *High DC Current Gain : hFE= 5000(Min) @ IC= -7A, VCE= -4V *Complement to Type KTD1510 APPLICATIONS *High power amplifier applications *Recomme.

KTB2510-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

KTB2510

Manufacturer:

Inchange Semiconductor

File Size:

146.19 KB

Description:

Silicon pnp power transistors.

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KTB2510 KTB2510 Silicon PNP Power Transistors Inchange Semiconductor

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