EMITTER Datasheet | Specifications & PDF Download

Infrared Emitter Product No: M T E 1 3 0 0 N N 1 - W R C Peak Emission Wavelength: 1300nm The 1300nm IR emitter series is designed for applications r

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Analog Metric Limited Email: sales@analogmetric.com Shuguang Vacuum Tube 845 Emitter Tube: 845B (845) Compatible with: UY-845 DESCRIPTION Direct

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Analog Metric Limited Email: sales@analogmetric.com Shuguang Vacuum Tube 805 Emitter Tube: 805 (FU-5) Compatible with: GL-805 DESCRIPTION Direct he

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PC851 PC851 s Features 1. High collector-emitter voltage ( VCEO : 300V) 2. High isolation voltage between input and output ( Viso : 5 000V rms ) 3. C

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Analog Metric Limited Email: sales@analogmetric.com Shuguang Vacuum Tube 572B Emitter Tube: 572B DESCRIPTION Direct heating cathode, high gain trio

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Analog Metric Limited Email: sales@analogmetric.com Shuguang Vacuum Tube 845 Emitter Tube: 845B (845) Compatible with: UY-845 DESCRIPTION Direct

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Analog Metric Limited Email: sales@analogmetric.com Shuguang Vacuum Tube 811 Emitter Tube: 811 (FU-811) Compatible with: UY-807 DESCRIPTION Direct

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Analog Metric Limited Email: sales@analogmetric.com Shuguang Vacuum Tube 811 Emitter Tube: 811 (FU-811) Compatible with: UY-807 DESCRIPTION Direct

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Diode Rapid Switching Emitter Controlled Diode IDW30E65D1 Emitter Controlled Diode Rapid 1 Series Data sheet Industrial Power Control IDW30E65D1 Emit

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IDW75E60 Fast Switching Emitter Controlled Diode Features:  600V EmCon technology  Fast recovery  Soft switching  Low reverse recovery charge 

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Fast Switching Emitter Controlled Diode IDW100E60 Features:  600V Emitter Controlled technology  Fast recovery  Soft switching  Low reverse reco

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PC852 Series/PC853/PC853H PC852 Series PC853/PC853H s Features 1. High collector-emitter voltage PC852 Series , PC853 ( VCEO : 300V) PC853H ( VCEO :

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GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271, LD 271 H LD 271 L, LD 271 HL Area not flat 0.6 0.4 9.0 8.2 7.8 7.5 2.54 mm spacing 1.3 1.0

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F a1s2t S5w)i2t#c(h)i-n'g E,m itt.e-r C-EoJn@tArolled Diode /A=NOLA # 6 00 V0 E m>it te@r? C `RoPnUtr[o\llYe\dTetechnology # 2CDB64@F6BI # - @7

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Light Reflection Emitter / Sensor Array Optoelectronic Products 4-8 FPA103,FPA104 FPA105,FPA106 FPA107,FPA108 General Description The FPA103/104/105

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PNP Silicon AF Transistors BCX 78 BCX 79 q q q q q High current gain Low collector-emitter saturation voltage Low noise at 1 kHz Low noise at low f

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GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271, LD 271 H LD 271 L, LD 271 HL Area not flat 0.6 0.4 9.0 8.2 7.8 7.5 2.54 mm spacing 1.3 1.0

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U DataSheet4U.com

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HIRP1608Q08-B30 SMD Type 850nm Infrared Emitter Features  Small double-end package  Viewing Angle at X axis (Note3) = 650  High reliability  Goo

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