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LTZ-R15 - (LTZ-xxx) Light Emitting Diodes
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .TIL38 - P-N GaAs Infrared-Emitting Diode
P-N GaAs Infrared-Emitting Diode Optoelectronic Products 4-72 TIL38 General Description The TIL38 is a p-n GaAs infrared-emitting diode in a low-cos.PC-17K1 - Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
Photocoupler PC-17K1 • PC-17K2 • PC-17K4 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor.KP-1608SF4C - Infrared Emitting Diode
KP-1608SF4C 1.6 x 0.8 mm Infrared Emitting Diode DESCRIPTION SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes PACKAGE DIMENSIONS FE.MIE-144A1 - AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE MIE-144A1 Description The MIE-144A1 is a GaAs infrared emitting diode with AlGaAs Win.TLP580 - GaAlAs Infrared Emitting Diode and NPN Silicon Photo Transistor
w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com .KPA-3010F3C - Right Angle Infrared Emitting Diode
KPA-3010F3C 3.0 mm x 1.0 mm Right Angle Infrared Emitting Diode DESCRIPTION F3 Made with Gallium Arsenide Infrared Emitting diodes PACKAGE DIMENSI.KM2520F3C03 - Infrared Emitting Diode
KM2520F3C03 Infrared Emitting Diode DESCRIPTION F3 Made with Gallium Arsenide Infrared Emitting diodes PACKAGE DIMENSIONS FEATURES Subminiatur.OR-1009 - infrared emitting diode
Shenzhen Orient Components Co ., Ltd OR-10XX ORIENT Photo coupler Product Data Sheet Part Number: Customer: Date: OR-10XX SHENZHEN ORIENT COMPONE.PC-17L1 - Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
Photocoupler PC-17L1 • PC-17L2 • PC-17L4 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor .QEC113 - PLASTIC INFRARED LIGHT EMITTING DIODE
PLASTIC INFRARED LIGHT EMITTING DIODE QEC112 PACKAGE DIMENSIONS 0.116 (2.95) REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) QEC113 0.030 .LTZ-MR15 - (LTZ-xxx) Light Emitting Diodes
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .SE303A - Light Emitting Diode
t\fEC NEe Electronics Inc. SE303A \1 GaAslNFRARED I EMITTING DIODE NEPOC SERIES Description The SE303A is a GaAs (gallium arsenide) infrared em.PS2801C-4 - AlGaAs infrared emitting diode
ISOCOM MICRON SEMICONDUCTOR CO., LTD PS2801x-4 Series Description The PS2801x-4 series combine an AlGaAs infrared emitting diode as the emitter whic.XTHI12W - INFRARED EMITTING DIODE
Features ● Radial / Through hole package ● Reliable & robust ● Low power consumption ● Available on tape and reel ● RoHS Compliant Part Number: XTHI1.KP-1608F3C - Infrared Emitting Diode
KP-1608F3C 1.6 x 0.8 mm Infrared Emitting Diode DESCRIPTION F3 Made with Gallium Arsenide Infrared Emitting diodes PACKAGE DIMENSIONS FEATURES 1.6.L-34F3C - Infrared Emitting Diode
L-34F3C T-1 (3mm) Infrared Emitting Diode DESCRIPTION F3 Made with Gallium Arsenide Infrared Emitting diodes PACKAGE DIMENSIONS FEATURES Mechanical.L-53SF7C - INFRARED EMITTING DIODE
T-1 3/4 (5mm) INFRARED EMITTING DIODE L-53SF7C Features zMECHANICALLY AND SPECTRALLY MATCHED TO THE L-51P3C PHOTOTRANSISTOR. zBOTH WATER CLEAR LENS A.L-53SF7BT - INFRARED EMITTING DIODE
T-1 3/4 (5mm) INFRA-RED EMITTING DIODE L-53SF7BT Features !MECHANICALLY AND SPECTRALLY MATCHED TO THE L-51P3C PHOTOTRANSISTOR. !BOTH WATER CLEAR LENS.