EU1 Datasheet | Specifications & PDF Download

Global LCD Panel Exchange Center www.panelook.com Product Specification SPECIFICATION FOR APPROVAL LC320DXN ( ̻ ) Preliminary Specification ( ) Fi

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CED11P20/CEU11P20 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -200V, -10.5A, RDS(ON) = 0.36Ω @VGS = -10V. Super high de

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EIA Class 1 Temperature Compensating Disc Ceramic Capacitors { { { { Temperature Compensating Ideal For Use in Timing and Oscillating Circuits Conform

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www.DataSheet4U.com AMEU150 Series 150 Watt (U - Bracket) AC/DC Converter • • • • U - BRACKER SWITCHING POWER SUPPLY UNIVERSAL INPUT RANGE 90…264 VAC

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EIA Class 1 Temperature Compensating Disc Ceramic Capacitors { { { { Temperature Compensating Ideal For Use in Timing and Oscillating Circuits Conform

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CED14G04/CEU14G04 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 40V, 125A, RDS(ON) = 3.8mΩ @VGS = 10V. RDS(ON) = 6.8mΩ @V

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 10A, RDS(ON) = 120mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(O

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. Super high dense cell

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CED110P03/CEU110P03 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -92A, RDS(ON) =6.0mΩ @VGS = -10V. RDS(ON) =9.0mΩ

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 10A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(

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CED1710/CEU1710 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 17A, RDS(ON) = 85mΩ @VGS = 10V. Super high dense cell design for ext

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CED16N10/CEU16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design f

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www.eicsemi.com EU1 - EU1Z PRV : 200 - 600 Volts Io : 0.25 Ampere TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 FAST RECOVERY RECTIFIER DIODES D

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P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -8A, RDS(ON) = 350mΩ @VGS = -10V. CED10P10/CEU10P10 Super high dense cell design

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EIA Class 1 Temperature Compensating Disc Ceramic Capacitors { { { { Temperature Compensating Ideal For Use in Timing and Oscillating Circuits Conform

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www.murata-ps.com SELECTION GUIDE MEU1 Series Isolated 1W Single Output DC/DC Converters Nominal Input Voltage Output Voltage Output Current Load Re

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CED1185/CEU1185 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 800V, 3.4A, RDS(ON) = 2.9 Ω @VGS = 10V. Super high dense ce

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EU1Z-EU1C High Efficiency Rectifiers VOLTAGE RANGE: 200--- 1000 V CURRENT: 0.25,0.5 A Features Low cost Diffused junction Low leakage Low forward vol

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www.eicsemi.com EU1 - EU1Z PRV : 200 - 600 Volts Io : 0.25 Ampere TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 FAST RECOVERY RECTIFIER DIODES D

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