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M11B11664A - 64 K x 16 DRAM
(OLWH07 DRAM FEATURES y X16 organization y EDO (Extended Data-Output) access mode y 2 CAS Byte/Word Read/Write operation y Single 5V ( ± 10%) power .M10B11664A - 64K X 16 DRAM FAST PAGE MODE
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$ % DRAM FEATURES X4 organization EDO (Extended Data-Out) access mode Single power supply : 5V ± 10% Vcc for 5V product 3.3V ± 10% Vcc for 3.3V produ.M11B1644A - (M11x1644xA) 4M X 4 DRAM
$ % DRAM FEATURES X4 organization EDO (Extended Data-Out) access mode Single power supply : 5V ± 10% Vcc for 5V product 3.3V ± 10% Vcc for 3.3V produ.M11B1644SA - (M11x1644xA) 4M X 4 DRAM
$ % DRAM FEATURES X4 organization EDO (Extended Data-Out) access mode Single power supply : 5V ± 10% Vcc for 5V product 3.3V ± 10% Vcc for 3.3V produ.M11L1644A - (M11x1644xA) 4M X 4 DRAM
$ % DRAM FEATURES X4 organization EDO (Extended Data-Out) access mode Single power supply : 5V ± 10% Vcc for 5V product 3.3V ± 10% Vcc for 3.3V produ.M13L128168A - DDR SDRAM
ESMT Revision History Revision 1.3 -Revise operation voltage. (page 5) Revision 1.2 -Changed tWTR from 1 tCK to 2 tCK. Revision 1.1 -Changed absolute .M11L16161A - (M11x16161xA) 1M X 16 DRAM
$ % DRAM FEATURES X16 organization EDO (Extended Data-Out) access mode 2 CAS Byte/Word Read/Write operation Single power supply : 5V ± 10% Vcc for 5V.M11L16161SA - (M11x16161xA) 1M X 16 DRAM
$ % DRAM FEATURES X16 organization EDO (Extended Data-Out) access mode 2 CAS Byte/Word Read/Write operation Single power supply : 5V ± 10% Vcc for 5V.M11B16161A - (M11x16161xA) 1M X 16 DRAM
$ % DRAM FEATURES X16 organization EDO (Extended Data-Out) access mode 2 CAS Byte/Word Read/Write operation Single power supply : 5V ± 10% Vcc for 5V.M11B16161SA - (M11x16161xA) 1M X 16 DRAM
$ % DRAM FEATURES X16 organization EDO (Extended Data-Out) access mode 2 CAS Byte/Word Read/Write operation Single power supply : 5V ± 10% Vcc for 5V.