F1002 Datasheet | Specifications & PDF Download

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1002MA/D Microwave Pulse Power Transistors . . . designed for Class B a

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www.DataSheet4U.com SF1002 Series 140 MHz 40kHz SAW Filter • Specifications MtronPTI reserves the right to make changes to the product(s) and servic

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SF1001CT thru SF1007CT SUPERFAST RECOVERY RECTIFIER VOLTAGE - 50 TO 600 VOLTS CURRENT - 10 AMPERES TO-220AB FEATURES Low forward voltage drop High Cu

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HAF1002(L), HAF1002(S) Silicon P Channel MOS FET Series Power Switching ADE-208-586 (Z) 1st. Edition October 1997 Features This FET has the over temp

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High-power Super Fast Rectifier Chip Integration Technology Corporation ETF10005 THRU ETF1010 10 Amperes High Power Super Fast Rectifiers VOLTAGE :

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HAF1002(L), HAF1002(S) Silicon P Channel MOS FET Series Power Switching ADE-208-586 (Z) 1st. Edition October 1997 Features This FET has the over temp

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® WON-TOP ELECTRONICS UF1000CT – UF1008CT 10A GLASS PASSIVATED DUAL ULTRAFAST RECTIFIER Pb Features  Glass Passivated Die Construction  Ultrafast

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UTF10005CT THRU UTF1008CT 10A High Power Ultra Fast Rectifiers ■ Features • Dual rectifier construction, positive centetap, offer 5.0A half wave and

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PTF 10021 30 Watts, 1.4–1.6 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10021 is an internally matched common source N-channel enhancemen

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SFF10005 THUR SFF1006 SUPER FAST GLASS PASSIVATED RECTIFIERS Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Idedlly

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HAF1002(L), HAF1002(S) Silicon P Channel MOS FET Series Power Switching ADE-208-586 (Z) 1st. Edition October 1997 Features This FET has the over temp

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Dual High-power Super Fast Rectifier Chip Integration Technology Corporation ETF10005CT THRU ETF1010CT 10 Amperes High Power Super Fast Rectifiers V

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UF1000 THRU UF1008 ULTRAFAST SWITCHING RECTIFIER VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Amperes FEATURES l Plastic package has Underwriters Laborato

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Metal Film Fixed Resistor Specifications: Type Rated Power Max. Working Voltage Max. Overload Voltage Dielectric Withstanding Voltage Rated Ambi

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UTF10005 THRU UTF1008 10A High Power Ultra Fast Rectifiers ■ Features • Low power loss, high efficiency. • High surge current capability. • Ultra fas

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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SUF1002 Dual N-ch Trench MOSFET 30V, 5.8A N-channel Trench MOSFET Features  Low drain-source On-resistance: RDS(on)=24mΩ @VGS=10V, ID=2.9A  Low ga

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SFF1001G – SFF1008G Taiwan Semiconductor 10A, 50V - 600V Super Fast Rectifier FEATURES ● AEC-Q101 qualified available ● High efficiency, low VF ● Hi

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CREAT BY ART SFF1001GA - SFF1008GA 10.0AMPS Isolated Glass Passivated Super Fast Rectifier ITO-220AB Features — — — — — — High efficiency, low VF Hi

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SF1001G - SF1008G 10.0 AMPS. Glass Passivated Super Fast Rectifiers TO-220AB Features High efficiency, low VF High current capability High reliabilit

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