HAF1002L - P-Channel MOSFET

Hitachi Semiconductor

Datasheet Details

Part number	HAF1002L
Manufacturer	Hitachi Semiconductor
File Size	35.21 KB
Description	P-Channel MOSFET
Datasheet	HAF1002L_HitachiSemiconductor.pdf

This FET has the over temperature shut.
down capability sensing to the junction temperature. This FET has the built.
in over temperature shut.
down circuit in the gate area. And this circuit operation to shut.
down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Logic level operation (.
4 to.
6 V Gate drive).
High endurance capability against to the short circuit.

📁 HAF1002L Similar Datasheet

HAF1008 - P-Channel MOSFET (Renesas)
HAF1008L - P-Channel MOSFET (Renesas)
HAF1008S - P-Channel MOSFET (Renesas)
HAF1009 - Silicon P-Channel MOSFET (Renesas Technology)
HAF1010RJ - P-Channel MOSFET (Renesas)
HAF2012 - Silicon N Channel MOS FET Series Power Switching (Renesas Technology)
HAF2012L - Silicon N Channel MOS FET Series Power Switching (Renesas Technology)
HAF2012S - Silicon N Channel MOS FET Series Power Switching (Renesas Technology)

Other Datasheets by Hitachi Semiconductor

Published: Mar 22, 2005 |