HAF2012 Datasheet (Renesas Technology) - Silicon N Channel MOS FET Series Power Switching

HAF2012, Silicon N Channel MOS FET Series Power Switching

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio

HAF2012 Features

* Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS0004AE-A (Package nam