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HAF2017L Datasheet - Renesas

HAF2017L Silicon N-Channel Power MOS FET

This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, ov.

HAF2017L Features

* Logic level operation (4 to 6 V Gate drive)

* High endurance capability against to the short circuit

* Built-in the over temperature shutdown circuit

* Latch type shutdown operation (Need 0 voltage recovery) Outline D G Gate Resistor Temperature Sensing Circuit

HAF2017L Datasheet (121.57 KB)

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Datasheet Details

Part number:

HAF2017L

Manufacturer:

Renesas ↗

File Size:

121.57 KB

Description:

Silicon n-channel power mos fet.

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HAF2017L Silicon N-Channel Power MOS FET Renesas

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