HAF2017S, HAF2017 Datasheet - Renesas

HAF2017S Silicon N-Channel Power MOS FET

This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, ov.

HAF2017S Features

* Logic level operation (4 to 6 V Gate drive)

* High endurance capability against to the short circuit

* Built-in the over temperature shutdown circuit

* Latch type shutdown operation (Need 0 voltage recovery) Outline D G Gate Resistor Temperature Sensing Circuit

HAF2017-Renesas.pdf

HAF2017S Datasheet Preview — This datasheet PDF includes multiple part numbers: HAF2017S, HAF2017. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HAF2017S, HAF2017

Manufacturer:

Renesas ↗

File Size:

121.57 KB

Description:

Silicon n-channel power mos fet.

Note:

This datasheet PDF includes multiple part numbers: HAF2017S, HAF2017.
Please refer to the document for exact specifications by model.

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HAF2017S HAF2017 Silicon N-Channel Power MOS FET Renesas

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