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HAF2017 - Silicon N-Channel Power MOS FET

HAF2017 Description

HAF2017(L), HAF2017(S) Silicon N Channel Power MOS FET Power Switching REJ03G0234-0200Z (Previous ADE-208-1637 (Z)) Rev.2.00 Apr.13.2004 Descriptio.
This FET has the over temperature shutdown capability sensing the junction temperature.

HAF2017 Features

* Logic level operation (4 to 6 V Gate drive)
* High endurance capability against to the short circuit
* Built-in the over temperature shutdown circuit
* Latch type shutdown operation (Need 0 voltage recovery) Outline D G Gate Resistor Temperature Sensing Circuit

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Datasheet Details

Part number
HAF2017
Manufacturer
Renesas ↗
File Size
121.57 KB
Datasheet
HAF2017-Renesas.pdf
Description
Silicon N-Channel Power MOS FET

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Silicon N-Channel Power MOS FET Renesas
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