Datasheet Details
- Part number
- HAF2017
- Manufacturer
- Renesas ↗
- File Size
- 121.57 KB
- Datasheet
- HAF2017-Renesas.pdf
- Description
- Silicon N-Channel Power MOS FET
HAF2017 Description
HAF2017(L), HAF2017(S) Silicon N Channel Power MOS FET Power Switching REJ03G0234-0200Z (Previous ADE-208-1637 (Z)) Rev.2.00 Apr.13.2004 Descriptio.
This FET has the over temperature shutdown capability sensing the junction temperature.
HAF2017 Features
* Logic level operation (4 to 6 V Gate drive)
* High endurance capability against to the short circuit
* Built-in the over temperature shutdown circuit
* Latch type shutdown operation (Need 0 voltage recovery)
Outline
D
G Gate Resistor
Temperature Sensing Circuit
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