* Logic level operation (4 to 6 V Gate drive)
* High endurance capability against to the short circuit
* Built-in the over temperature shutdown circuit
* Latch type shutdown operation (Need 0 voltage recovery) Outline D G Gate Resistor Temperature Sensing Circuit
HAF2017
121.57 KB
Silicon n-channel power mos fet.
HAF2017(L), HAF2017(S)
Silicon N Channel Power MOS FET Power Switching
REJ03G0234-0200Z (Previous ADE-208-1637 (Z))
Rev.2.00 Apr.13.2004
Descriptio.
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