HAF2011 - Silicon N Channel MOS FET Series Power Switching

Hitachi Semiconductor

Datasheet Details

Part number	HAF2011
Manufacturer	Hitachi Semiconductor
File Size	34.68 KB
Description	Silicon N Channel MOS FET Series Power Switching
Datasheet	HAF2011_HitachiSemiconductor.pdf

This FET has the over temperature shut.
down capability sensing to the junction temperature. This FET has the built.
in over temperature shut.
down circuit in the gate area. And this circuit operation to shut.
down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built.

📁 HAF2011 Similar Datasheet

HAF2012 - Silicon N Channel MOS FET Series Power Switching (Renesas Technology)
HAF2012L - Silicon N Channel MOS FET Series Power Switching (Renesas Technology)
HAF2012S - Silicon N Channel MOS FET Series Power Switching (Renesas Technology)
HAF2017 - Silicon N-Channel Power MOS FET (Renesas)
HAF2017L - Silicon N-Channel Power MOS FET (Renesas)
HAF2017S - Silicon N-Channel Power MOS FET (Renesas)
HAF2021 - Silicon N Channel MOSFET Series Power Switching (Renesas Technology)
HAF2021L - Silicon N-Channel MOSFET (Renesas)

Other Datasheets by Hitachi Semiconductor

Published: Mar 23, 2005 |