HAF2011 Datasheet PDF - Hitachi Semiconductor Silicon N Channel MOS FET Series Power Switching Specs

HAF2011 - Silicon N Channel MOS FET Series Power Switching

Datasheet Summary

Features

This FET has the over temperature shut.
down capability sensing to the junction temperature. This FET has the built.
in over temperature shut.
down circuit in the gate area. And this circuit operation to shut.
down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built.

Datasheet Details

Part number	HAF2011
Manufacturer	Hitachi Semiconductor
File Size	34.68 KB
Description	Silicon N Channel MOS FET Series Power Switching
Datasheet	HAF2011 Datasheet
Additional preview pages of the HAF2011 datasheet.

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Full PDF Text Transcription

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HAF2011(L),HAF2011(S) Silicon N Channel MOS FET Series Power Switching Target specification ADE-208-738 (Z) 1st. Edition Jan. 1999 Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

Published: Mar 23, 2005 |