* Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built
* in the over temperature shut
* down circuit Latch type shut
* down operation (Need 0 voltage recovery) Outline TO
* 220FM D G
HAF2005
Hitachi Semiconductor
31.82 KB
Silicon n channel mos fet series power switching.
HAF2005 Silicon N Channel MOS FET Series Power Switching ADE-208-688 (Z) Target specification 1st. Edition Nov. 1998 This FET has the over temperatur.
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