HAF2005 Silicon N Channel MOS FET Series Power Switching

Hitachi Semiconductor

Description

HAF2005 Silicon N Channel MOS FET Series Power Switching ADE-208-688 (Z) Target specification 1st.Edition Nov.1998 This FET has the over temperatur.

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Datasheet Specifications

Part number: HAF2005
Manufacturer: Hitachi Semiconductor
File Size: 31.82 KB
Datasheet: HAF2005_HitachiSemiconductor.pdf
Description: Silicon N Channel MOS FET Series Power Switching

Features

* Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built
* in the over temperature shut
* down circuit Latch type shut
* down operation (Need 0 voltage recovery) Outline TO
* 220FM D G

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HAF2005 Silicon Channel MOS FET Series Power Switching Hitachi Semiconductor

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