HAF2015RJ Datasheet (Renesas)

HAF2015RJ, N-Channel MOSFET

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio

HAF2015RJ Features

* Logic level operation (5 to 6 V Gate drive)

* High endurance capability against to the short circuit

* Built-in the over temperature shut-down circuit

* Temperature hysteresis type.

* High density mounting. Outline RENESAS Package code: PRSP0008DD-A (Packag