HAF2012S, HAF2012 Silicon N Channel MOS FET Series Power Switching

Renesas Technology

Description

www.DataSheet4U.com HAF2012(L), HAF2012(S) Silicon N Channel MOS FET Series Power Switching REJ03G1139-0400 Rev.4.00 Jul 13, 2007 .
This FET has the over temperature shut-down capability sensing to the junction temperature.

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HAF2012S Datasheet Preview — This datasheet PDF includes multiple part numbers: HAF2012S, HAF2012. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HAF2012S, HAF2012
Manufacturer: Renesas ↗ Technology
File Size: 154.16 KB
Datasheet: HAF2012_RenesasTechnology.pdf
Description: Silicon N Channel MOS FET Series Power Switching
Note: This datasheet PDF includes multiple part numbers: HAF2012S, HAF2012.
Please refer to the document for exact specifications by model.

Features

* Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS0004AE-A (Package nam

Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you

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HAF2012 Silicon Channel MOS FET Series Power Switching Renesas Technology

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