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HAF2012S, HAF2012 Datasheet - Renesas Technology

HAF2012S Silicon N Channel MOS FET Series Power Switching

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio.

HAF2012S Features

* Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS0004AE-A (Package nam

HAF2012_RenesasTechnology.pdf

This datasheet PDF includes multiple part numbers: HAF2012S, HAF2012. Please refer to the document for exact specifications by model.
HAF2012S Datasheet Preview Page 2 HAF2012S Datasheet Preview Page 3

Datasheet Details

Part number:

HAF2012S, HAF2012

Manufacturer:

Renesas ↗ Technology

File Size:

154.16 KB

Description:

Silicon n channel mos fet series power switching.

Note:

This datasheet PDF includes multiple part numbers: HAF2012S, HAF2012.
Please refer to the document for exact specifications by model.

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TAGS

HAF2012S HAF2012 Silicon Channel MOS FET Series Power Switching Renesas Technology

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