HAF2027 Datasheet - Renesas Technology

HAF2027 Silicon N-Channel Power MOSFET Power Switching

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio.

HAF2027 Features

* Logic level operation (4 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Outline RENESAS Package code: PRSS0004AE-A (Package name

HAF2027_RenesasTechnology.pdf