HAF2027 Datasheet (Renesas Technology) - Silicon N-Channel Power MOSFET Power Switching

HAF2027, Silicon N-Channel Power MOSFET Power Switching

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio

HAF2027 Features

* Logic level operation (4 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Outline RENESAS Package code: PRSS0004AE-A (Package name