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HAF2026RJ Datasheet - Renesas Technology

Silicon N Channel Power MOSFET Power Switching

HAF2026RJ Features

* Logic level operation (5 to 6 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Built-in the current limitation circuit O

HAF2026RJ General Description

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio.

HAF2026RJ Datasheet (178.52 KB)

Preview of HAF2026RJ PDF

Datasheet Details

Part number:

HAF2026RJ

Manufacturer:

Renesas ↗ Technology

File Size:

178.52 KB

Description:

Silicon n channel power mosfet power switching.

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HAF2026RJ Silicon Channel Power MOSFET Power Switching Renesas Technology

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