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HAF2027L, HAF2027 Datasheet - Renesas

HAF2027L Silicon N-Channel Power MOSFET Power Switching

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio.

HAF2027L Features

* Logic level operation (4 V Gate drive)

* Built-in the over temperature shut-down circuit

* High endurance capability against to the shut-down circuit

* Latch type shut down operation (need 0 voltage recovery) Outline RENESAS Package code: PRSS0004AE-A (Package nam

HAF2027_RenesasTechnology.pdf

This datasheet PDF includes multiple part numbers: HAF2027L, HAF2027. Please refer to the document for exact specifications by model.
HAF2027L Datasheet Preview Page 2 HAF2027L Datasheet Preview Page 3

Datasheet Details

Part number:

HAF2027L, HAF2027

Manufacturer:

Renesas ↗

File Size:

151.99 KB

Description:

Silicon n-channel power mosfet power switching.

Note:

This datasheet PDF includes multiple part numbers: HAF2027L, HAF2027.
Please refer to the document for exact specifications by model.

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TAGS

HAF2027L HAF2027 Silicon N-Channel Power MOSFET Power Switching Renesas

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