* Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built
* in the over temperature shut
* down circuit Latch type shut
* down operation (Need 0 voltage recovery) Outline DPAK
* 2 2, 4 D
HAF2007L
Hitachi Semiconductor
42.91 KB
Silicon n channel mos fet series power switching.
HAF2007(L), HAF2007(S) Silicon N Channel MOS FET Series Power Switching Target specification ADE-208-706 (Z) 1st. Edition Dec. 1998 This FET has the .
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