HAF2007L Silicon N Channel MOS FET Series Power Switching

Hitachi Semiconductor

Description

HAF2007(L), HAF2007(S) Silicon N Channel MOS FET Series Power Switching Target specification ADE-208-706 (Z) 1st.Edition Dec.1998 This FET has the .

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Datasheet Specifications

Part number: HAF2007L
Manufacturer: Hitachi Semiconductor
File Size: 42.91 KB
Datasheet: HAF2007L_HitachiSemiconductor.pdf
Description: Silicon N Channel MOS FET Series Power Switching

Features

* Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built
* in the over temperature shut
* down circuit Latch type shut
* down operation (Need 0 voltage recovery) Outline DPAK
* 2 2, 4 D

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HAF2007L Silicon Channel MOS FET Series Power Switching Hitachi Semiconductor

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