HAF1010RJ Datasheet - Renesas

HAF1010RJ P-Channel MOSFET

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio.

HAF1010RJ Features

* Logic level operation to (

* 4 to

* 6 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Built-in the current limitation circuit. High density mounting Power su

HAF1010RJ-Renesas.pdf