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HAF1010RJ Datasheet - Renesas

HAF1010RJ - P-Channel MOSFET

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio

HAF1010RJ Features

* Logic level operation to (

* 4 to

* 6 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Built-in the current limitation circuit. High density mounting Power su

HAF1010RJ-Renesas.pdf

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Datasheet Details

Part number:

HAF1010RJ

Manufacturer:

Renesas ↗

File Size:

325.24 KB

Description:

P-channel mosfet.

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