F1022 Datasheet | Specifications & PDF Download

F1022 RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDM.

RF Power LDMOS Transistor

Freescale Semiconductor Technical Data Document Number: MMRF1022HS Rev. 0, 4/2016 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOS

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Metal Film Fixed Resistor

Metal Film Fixed Resistor Specifications: Type Rated Power Max. Working Voltage Max. Overload Voltage Dielectric Withstanding Voltage Rated Ambi

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RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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Dual-channel Local Interconnect Network transceiver

Shanghai Chipanalog Microelectronics Co., Ltd. CA-IF1022 V1.0 2024/01/23 Dual-channel Local Interconnect Network (LIN) transceiver 1. Features • AE

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Micro Flow Sensor

Micro Flow Sensor （Model：F1022） Manual Version：2.0 Valid From：2014.05.01 Zhengzhou Winsen Electronics Technology Co., Ltd Statement This manual copyr

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