FB9N60A Datasheet | Specifications & PDF Download

PD - 91811 IRFB9N60A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive R

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iscN-Channel MOSFET Transistor IRFB9N60A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.75Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =

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www.vishay.com IRFB9N60A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Q

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PD - 91811 IRFB9N60A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive R

Rating: 1 ★ (2 votes)