Ordering number:EN3154 FC11 N-Channel Junction Si.
FC118 - NPN Transistor
Ordering number:EN3116 FC118 NPN Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications Features · Composite t.FC11 - N-channel FET
Ordering number:EN3154 FC11 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp, Differential Amp Applications Features · Adoption of F.FC110 - NPN Transistor
Ordering number:EN3078 FC110 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=22kΩ, R2.FC112 - NPN Transistor
Ordering number:EN3080 FC112 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=22kΩ, R2.FC114 - NPN Transistor
Ordering number:EN3082 FC114 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=10kΩ, R2.FC115 - PNP Transistor
Ordering number:EN3083 FC115 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=10kΩ, R2.FC117 - PNP Transistor
Ordering number:EN3115 FC117 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications Features · Composite t.FC119 - NPN Transistor
Ordering number:EN3061A FC119 NPN Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amp, Differential Amp Applications Features · C.VFC110 - High-Frequency VOLTAGE-TO-FREQUENCY CONVERTER
® VFC110 High-Frequency VOLTAGE-TO-FREQUENCY CONVERTER FEATURES q HIGH-FREQUENCY OPERATION: 4MHz FS max q EXCELLENT LINEARITY: ±0.02% typ at 2MHz q .FC111 - PNP Transistor
Ordering number:EN3079 FC111 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=22kΩ, R2.FC113 - PNP Transistor
Ordering number:EN3081 FC113 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=10kΩ, R2.FC116 - NPN Transistor
Ordering number:EN3084 FC116 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=10kΩ, R2.IXFC110N10P - PolarHT HiPerFET Power MOSFET
PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25.MFC110A - Thyristor/Diode Module
Thyristor/Thyristor Module Thyristor/Diode Module MECHANICAL DESCRIPTION The MTC, MFC module, combines the excellent thermal performances obtained by .MFC110 - Thyristor/Diode
MFC110 Thyristor/Diode Modules Features Isolated mounting base 2500V~ Pressure contact technology with increased power cycling capability Space.