PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C IXFC 110N10P VDSS ID25 RDS(on) = 100 V = 66 A = 17 mΩ www.DataSheet4U.com Maximum Ratings 100 100 ± 20 ± 30 66 250 60 40 1.0 10 158 -55 +175 175 -55 +150 V V V V A A A mJ J V/ns W °C °C °C °C °C N/lb g Fea
Datasheet Details
Part number:
IXFC110N10P
Manufacturer:
IXYS
File Size:
114.81 KB
Description:
Polarht hiperfet power mosfet.