IXFC110N10P Datasheet - IXYS

IXFC110N10P, PolarHT HiPerFET Power MOSFET

PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25.

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IXFC110N10P_IXYS.pdf

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Datasheet Details

Part number:

IXFC110N10P

Manufacturer:

IXYS

File Size:

114.81 KB

Description:

PolarHT HiPerFET Power MOSFET

Features

* z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Advantages z z ISOPLUS220TM (IXFC) E153432 G D

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IXFC110N10P PolarHT HiPerFET Power MOSFET IXYS

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