* z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Advantages z z ISOPLUS220TM (IXFC) E153432 G D
IXFC110N10P Datasheet (114.81 KB)
IXFC110N10P
IXYS
114.81 KB
Polarht hiperfet power mosfet.
PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
Preliminary Data Sheet
Symbol VDSS VDGR VGSS VGSM ID25.
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