IXFC14N80P Datasheet - IXYS Corporation

IXFC14N80P PolarHV HiPerFET Power MOSFET

PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C IXFC 14N80P (Electrically Isolated Tab) VDSS = 800 V = 8 A ID25 RDS(on) ≤ 770 mΩ ≤ 250 ns trr Maximum Ratings 800 800 ±30 ±40 8 40 7 30 1.2 10 130 -55 +150 150 -55 +150 V V V V A A A mJ J V/ns W °C °C.

IXFC14N80P Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(

IXFC14N80P_IXYSCorporation.pdf