* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(
IXFC14N80P Datasheet (109.53 KB)
IXFC14N80P
IXYS Corporation
109.53 KB
Polarhv hiperfet power mosfet.
PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR E.
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