IXFC14N80P Datasheet - IXYS Corporation

IXFC14N80P, PolarHV HiPerFET Power MOSFET

PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGS VGSM ID25 IDM IAR E.

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IXFC14N80P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFC14N80P

Manufacturer:

IXYS Corporation

File Size:

109.53 KB

Description:

PolarHV HiPerFET Power MOSFET

Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(

Applications

* DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 1

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IXFC14N80P PolarHV HiPerFET Power MOSFET IXYS Corporation

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