IXFC26N50P Datasheet, Mosfet, IXYS

IXFC26N50P Features

• Mosfet z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) Applications z DC-

PDF File Details

Part number:

IXFC26N50P

Manufacturer:

IXYS

File Size:

115.59kb

Download:

📄 Datasheet

Description:

Polarhv hiperfet power mosfet.

IXFC26N50P Application

• Applications z DC-DC converters z z z z ISOPLUS220TM (IXFC) E153432 G D S Isolated Tab G = Gate S = Source D = Drain 1.6 mm (0.062 in.) from ca

TAGS

IXFC26N50P

IXYS

📁 Related Datasheet

IXFC26N50 - (IXFC24N50 / IXFC26N50) HiPerFET MOSFETs ISOPLUS220 (IXYS Corporation)
.. ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High.

IXFC20N80P - PolarHV HiPerFET Power MOSFET (IXYS Corporation)
PolarHVTM HiPerFET Power MOSFET IXFC 20N80P IXFR 20N80P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche .

IXFC24N50 - (IXFC24N50 / IXFC26N50) HiPerFET MOSFETs ISOPLUS220 (IXYS Corporation)
.. ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High.

IXFC110N10P - PolarHT HiPerFET Power MOSFET (IXYS)
PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25.

IXFC12N80P - PolarHV HiPerFET Power MOSFET ISOPLUS220 (IXYS Corporation)
Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM (Electrically Isolated Back Surface) IXFC 12N80P VDSS ID25 RDS(on) trr .

IXFC13N50 - HiPerFET MOSFET ISOPLUS220 (IXYS Corporation)
ADVANCED TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMO.

IXFC14N60P - PolarHV HiPerFET Power MOSFET (IXYS Corporation)
PolarHVTM HiPerFET Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFC14N60P VDSS.

IXFC14N80P - PolarHV HiPerFET Power MOSFET (IXYS Corporation)
PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGS VGSM ID25 IDM IAR E.

IXFC15N80Q - N-Channel MOSFET (IXYS Corporation)
.. IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET Q-Class Electrically Isolated Back Surface N-Channel Enhancement Mode Avalanche Rated.

IXFC16N50P - PolarHV HiPerFET Power MOSFET (IXYS)
Advance Technical Information .. PolarHVTM HiPerFET Power MOSFET Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrins.