* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(
IXFC26N50P Datasheet (115.59 KB)
IXFC26N50P
IXYS
115.59 KB
Polarhv hiperfet power mosfet.
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PolarHVTM HiPerFET Power MOSFET
Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrins.
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