* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(
IXFC15N80Q Datasheet (537.88 KB)
IXFC15N80Q
IXYS Corporation
537.88 KB
N-channel mosfet.
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IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET Q-Class Electrically Isolated Back Surface
N-Channel Enhancement Mode Avalanche Rated.
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