IXFC15N80Q Datasheet - IXYS Corporation

IXFC15N80Q N-Channel MOSFET

www.DataSheet4U.com IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET Q-Class Electrically Isolated Back Surface N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg VDSS ID25 RDS(on) = 800 V = 13 A = 0.65 Ω trr ≤ 250 ns ISOPLUS220TM Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 min leads to tab mounting force with clip Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Cont.

IXFC15N80Q Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(

IXFC15N80Q_IXYSCorporation.pdf