* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(
IXFC16N80P Datasheet (219.35 KB)
IXFC16N80P
IXYS Corporation
219.35 KB
Polarhv hiperfet power mosfet.
Advance Technical Information
PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM
(Electrically Isolated Back Surface)
IXFC 16N80P
VDSS ID25
RDS(on) trr
.
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