IXFC16N80P Datasheet - IXYS Corporation

IXFC16N80P PolarHV HiPerFET Power MOSFET

Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM (Electrically Isolated Back Surface) IXFC 16N80P VDSS ID25 RDS(on) trr = 800 V = 9 A ≤ 650 mΩ ≤ 250 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s 50/60 Hz, RMS, t = 1, leads-to-tab Mounting Force Test Conditions TJ = 25° C to 150° C TJ = 25° C t.

IXFC16N80P Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(

IXFC16N80P_IXYSCorporation.pdf