IXFC20N80P, IXFR20N80P PolarHV HiPerFET Power MOSFET

IXYS Corporation

Description

PolarHVTM HiPerFET Power MOSFET IXFC 20N80P IXFR 20N80P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche .

📥 Download Datasheet

IXFC20N80P Datasheet Preview — This datasheet PDF includes multiple part numbers: IXFC20N80P, IXFR20N80P. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IXFC20N80P, IXFR20N80P
Manufacturer: IXYS Corporation
File Size: 152.89 KB
Datasheet: IXFR20N80P_IXYSCorporation.pdf
Description: PolarHV HiPerFET Power MOSFET
Note: This datasheet PDF includes multiple part numbers: IXFC20N80P, IXFR20N80P.
Please refer to the document for exact specifications by model.

Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(

Applications

* z DC-DC converters z z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ±100 25 1 500 V V nA μA mA m

IXFC20N80P Distributors

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IXFR20N80P PolarHV HiPerFET Power MOSFET IXYS Corporation

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