PolarHVTM HiPerFET Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFC14N60P VDSS ID25 RDS(on) trr = = ≤ ≤ 600V 8A 630mΩ 200ns ISOPLUS 220TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting force t = 1min t = 1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transi
IXFC14N60P_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFC14N60P
Manufacturer:
IXYS Corporation
File Size:
162.72 KB
Description:
Polarhv hiperfet power mosfet.