Datasheet Specifications
- Part number
- IXFC14N60P
- Manufacturer
- IXYS Corporation
- File Size
- 162.72 KB
- Datasheet
- IXFC14N60P_IXYSCorporation.pdf
- Description
- PolarHV HiPerFET Power MOSFET
Description
PolarHVTM HiPerFET Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFC14N60P VDSS.
Applications
* Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 2.5mA VGS = ±30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 7A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.5 V V Switched-mode and resonant-moIXFC14N60P Distributors
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