IXFC14N60P Datasheet - IXYS Corporation

IXFC14N60P, PolarHV HiPerFET Power MOSFET

PolarHVTM HiPerFET Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFC14N60P VDSS.

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IXFC14N60P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFC14N60P

Manufacturer:

IXYS Corporation

File Size:

162.72 KB

Description:

PolarHV HiPerFET Power MOSFET

Applications

* Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 2.5mA VGS = ±30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 7A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.5 V V Switched-mode and resonant-mo

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IXFC14N60P PolarHV HiPerFET Power MOSFET IXYS Corporation

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