* UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Avanlache rated Fast intrinsic diode Advantages Easy to mount Space savings High power density Applications: Symbol Test Conditions (TJ = 25°C, unless
IXFC14N60P Datasheet (162.72 KB)
IXFC14N60P
IXYS Corporation
162.72 KB
Polarhv hiperfet power mosfet.
PolarHVTM HiPerFET Power MOSFET
(Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFC14N60P
VDSS.
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