IXFC14N60P Datasheet - IXYS Corporation

IXFC14N60P PolarHV HiPerFET Power MOSFET

PolarHVTM HiPerFET Power MOSFET (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFC14N60P VDSS ID25 RDS(on) trr = = ≤ ≤ 600V 8A 630mΩ 200ns ISOPLUS 220TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting force t = 1min t = 1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transi.

IXFC14N60P Features

* UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Avanlache rated Fast intrinsic diode Advantages Easy to mount Space savings High power density Applications: Symbol Test Conditions (TJ = 25°C, unless

IXFC14N60P_IXYSCorporation.pdf