* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(
IXFC12N80P Datasheet (218.04 KB)
IXFC12N80P
IXYS Corporation
218.04 KB
Polarhv hiperfet power mosfet isoplus220.
Advance Technical Information
PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM
(Electrically Isolated Back Surface)
IXFC 12N80P
VDSS ID25
RDS(on) trr
.
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