IXFC16N50P Datasheet - IXYS

IXFC16N50P PolarHV HiPerFET Power MOSFET

Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrinsic Diode Avalanche Rated IXFC 16N50P VDSS ID25 RDS(on) trr = 500 V = 10 A = 450 mΩ = 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C I.

IXFC16N50P Features

* z 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s 50/60 Hz, RMS, t = 1, leads-to-tab Mounting Force 300 250 2500 11..65/2.5..15 2 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitan

IXFC16N50P_IXYS.pdf