* z D = Drain z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(
IXFC13N50 Datasheet (523.23 KB)
IXFC13N50
IXYS Corporation
523.23 KB
Hiperfet mosfet isoplus220.
ADVANCED TECHNICAL INFORMATION
HiPerFETTM MOSFET
ISOPLUS220TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode High dv/dt, Low trr, HDMO.
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