IXFC13N50 Datasheet - IXYS Corporation

IXFC13N50 HiPerFET MOSFET ISOPLUS220

ADVANCED TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFC13N50 VDSS ID25 RDS(on) trr = 500 = 12 = 0.4 ≤ 250 V A Ω ns ISOPLUS 220TM Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight 1.6 mm (0.062 in.) from case for 10 s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C.

IXFC13N50 Features

* z D = Drain z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(

IXFC13N50_IXYSCorporation.pdf