IXFC13N50 Datasheet - IXYS Corporation

IXFC13N50, HiPerFET MOSFET ISOPLUS220

ADVANCED TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMO.

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IXFC13N50_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFC13N50

Manufacturer:

IXYS Corporation

File Size:

523.23 KB

Description:

HiPerFET MOSFET ISOPLUS220

Features

* z D = Drain z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(

Applications

* z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ± 100 TJ = 25°C TJ = 125°C 200 1 0.4 V V nA µA mA Ω z z DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control VDSS VGS(th) I

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IXFC13N50 HiPerFET MOSFET ISOPLUS220 IXYS Corporation

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