Datasheet Specifications
- Part number
- IXFC13N50
- Manufacturer
- IXYS Corporation
- File Size
- 523.23 KB
- Datasheet
- IXFC13N50_IXYSCorporation.pdf
- Description
- HiPerFET MOSFET ISOPLUS220
Description
ADVANCED TECHNICAL INFORMATION HiPerFETTM MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMO.
Features
* z D = Drain z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(Applications
* z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ± 100 TJ = 25°C TJ = 125°C 200 1 0.4 V V nA µA mA Ω z z DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control VDSS VGS(th) IIXFC13N50 Distributors
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