IXFC74N20P Datasheet - IXYS

IXFC74N20P Power MOSFET

PolarHTTM HiPerFET IXFC 74N20P Power MOSFET ISOPLUS220TM (Electrically Isolated Back Surface) V= DSS ID25 = = RDS(on) trr ≤ 200 V 35 A 36 mΩ 200 ns N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS 220TM E153432 V DSS VDGR VGS V GSM ID25 IDM IAR EAR EAS dv/dt P D TJ TJM T stg T L VISOL FC Weight T J = 25°C to 175°C 200 TJ = 25°C to 175°C; RGS = 1 MΩ 200 Continuous ±20 Transient ±30 TC = 25°C TC = 25°C, pulse width.

IXFC74N20P Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(

IXFC74N20P_IXYS.pdf