* l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(
IXFC26N50 Datasheet (95.45 KB)
IXFC26N50
IXYS Corporation
95.45 KB
(ixfc24n50 / ixfc26n50) hiperfet mosfets isoplus220.
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ADVANCE TECHNICAL INFORMATION
HiPerFETTM MOSFETs ISOPLUS220TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode High.
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