IXFC26N50 Datasheet - IXYS Corporation

IXFC26N50 (IXFC24N50 / IXFC26N50) HiPerFET MOSFETs ISOPLUS220

www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) 0.20 Ω 0.23 Ω IXFC 26N50 IXFC 24N50 500 V 23 A 500 V 21 A trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25.

IXFC26N50 Features

* l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(

IXFC26N50 Datasheet (95.45 KB)

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Datasheet Details

Part number:

IXFC26N50

Manufacturer:

IXYS Corporation

File Size:

95.45 KB

Description:

(ixfc24n50 / ixfc26n50) hiperfet mosfets isoplus220.

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IXFC26N50 IXFC24N50 IXFC26N50 HiPerFET MOSFETs ISOPLUS220 IXYS Corporation

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