FC110 Datasheet | Specifications & PDF Download

PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25

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MFC110 Thyristor/Diode Modules Features Isolated mounting base 2500V~ Pressure contact technology with increased power cycling capability Space

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Thyristor/Thyristor Module Thyristor/Diode Module MECHANICAL DESCRIPTION The MTC, MFC module, combines the excellent thermal performances obtained by

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Ordering number:EN3078 FC110 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=22kΩ, R2

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® VFC110 High-Frequency VOLTAGE-TO-FREQUENCY CONVERTER FEATURES q HIGH-FREQUENCY OPERATION: 4MHz FS max q EXCELLENT LINEARITY: ±0.02% typ at 2MHz q

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