FCB110N65F Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance

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FCB110N65F — N-Channel SuperFET® II FRFET® MOSFET August 2016 FCB110N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 35 A, 110 mΩ Features • 700 V

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