FCH130N60 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor FCH130N60 ·FEATURES ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 600V ·Static drain-source on-resistance:

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MOSFET – N-Channel, SUPERFET II 600 V, 28 A, 130 mW FCH130N60 Description SUPERFET® II MOSFET is ON Semiconductor’s brand−new high voltage super−junct

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FCH130N60 — N-Channel SuperFET® II MOSFET July 2014 FCH130N60 N-Channel SuperFET® II MOSFET 600 V, 28 A, 130 m Features • 650 V @ TJ = 150°C • Typ

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