FCP125N65S Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 125mΩ(Max) ·Fast Sw

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche

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FCP125N65S3R0 MOSFET – Power, N-Channel, SUPERFET) III, Easy Drive 650 V, 24 A, 125 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand-new

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FCP125N65S3 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new hi

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