FDB8880 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263 packaging ·Drain Source Voltage- : VDSS ≥ 30V ·Static drain-source on-resistance: RDS(on) ≤ 11

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FDP8880 / FDB8880 0 May 2008 FDP8880 / FDB8880 N-Channel PowerTrench® MOSFET tmM 30V, 54A, 11.6mΩ Features rDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 40A

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