FDFMA2P859T Integrated P-Channel PowerTrench® MOS.
Fairchild Semiconductor
FDFMA2P859T - Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDFMA2P859T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode FDFMA2P859T –20 V, –3.0 A, 120 m: Features MOSFET: Max rDS(on) = 120 m: at .
