FDFMA2P859T - Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Fairchild Semiconductor

FDFMA2P859T Datasheet Preview — Preview of FDFMA2P859T PDF

Datasheet Details

Part number	FDFMA2P859T
Manufacturer	Fairchild ↗ Semiconductor
File Size	326.47 KB
Description	Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Datasheet	FDFMA2P859T_FairchildSemiconductor.pdf

FDFMA2P859T Product details

Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications.

Features

MOSFET:.
Max rDS(on) = 120 m: at VGS =.
4.5 V, ID =.
3.0 A.
Max rDS(on) = 160 m: at VGS =.
2.5 V, ID =.
2.5 A.
Max rDS(on) = 240 m: at VGS =.
1.8 V, ID =.
1.0 A July 2009 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General.

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Published: Dec 17, 2009 |