FDFMA2P859T Datasheet, Diode, Fairchild Semiconductor

FDFMA2P859T Features

• Diode MOSFET:
• Max rDS(on) = 120 m: at VGS =
    –4.5 V, ID =
    –3.0 A
• Max rDS(on) = 160 m: at VGS =
    –2.5 V, ID =
    

PDF File Details

Part number:

FDFMA2P859T

Manufacturer:

Fairchild Semiconductor

File Size:

326.47kb

Download:

📄 Datasheet

Description:

Integrated p-channel powertrench mosfet and schottky diode. This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-p

FDFMA2P859T Application

• Applications It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduc

TAGS

FDFMA2P859T

Fairchild Semiconductor

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