FDFMA2P859T Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Fairchild Semiconductor

Description

FDFMA2P859T Integrated P-Channel PowerTrench® MOSFET and Schottky Diode FDFMA2P859T *20 V, *3.0 A, 120 m: .
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applicati.

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Datasheet Specifications

Part number: FDFMA2P859T
Manufacturer: Fairchild Semiconductor
File Size: 326.47 KB
Datasheet: FDFMA2P859T_FairchildSemiconductor.pdf
Description: Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Features

* MOSFET:
* Max rDS(on) = 120 m: at VGS =
* 4.5 V, ID =
* 3.0 A
* Max rDS(on) = 160 m: at VGS =
* 2.5 V, ID =
* 2.5 A
* Max rDS(on) = 240 m: at VGS =
* 1.8 V, ID =
* 1.0 A July 2009 Integrated P-Channel PowerTrench® MOSFET and Schottk

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FDFMA2P859T Integrated P-Channel PowerTrench MOSFET and Schottky Diode Fairchild Semiconductor

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