FDFMA2P859T - Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDFMA2P859T Features
* MOSFET:
* Max rDS(on) = 120 m: at VGS =
* 4.5 V, ID =
* 3.0 A
* Max rDS(on) = 160 m: at VGS =
* 2.5 V, ID =
* 2.5 A
* Max rDS(on) = 240 m: at VGS =
* 1.8 V, ID =
* 1.0 A July 2009 Integrated P-Channel PowerTrench® MOSFET and Schottk
