FDFS6N548 - N-Channel MOSFET and Schottky Diode

ON Semiconductor

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Datasheet Details

Part number	FDFS6N548
Manufacturer	ON Semiconductor ↗
File Size	328.67 KB
Description	N-Channel MOSFET and Schottky Diode
Datasheet	FDFS6N548-ONSemiconductor.pdf

FDFS6N548 Product details

Description

The FDFS6N548 combines the exceptional performance of ON Semiconductor’s PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO 8 package.

Features

a fast switching, low gate charge MOSFET with very low on.
state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features.
Max rDS(on) = 23 mW at VGS = 10 V, ID = 7 A.
Max rDS(on) = 30 mW at VGS = 4.5 V, ID = 6 A.
VF < 0.45 V @ 2 A VF < 0.28 V @ 100 mA.
Schottky and MOSFET Incorporated into Single Power Surface Mount SO.
8 Package.
Electrically Independent Schottky and MOS.

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Published: Dec 24, 2023 |